케이팹쓰리디

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Imec's advanced 300mm RF silicon interposer enables scalable system-level integration of III-V chiplets with silicon CMOS for next-generation RF and mixed-signal systems.
Embedded high-density MIM capacitors reduce parasitic inductance, improve power integrity, and support compact millimeter-wave and sub-THz RF front-end architectures.
Comprehensive electromagnetic and circuit-level passive-device models enable precise RF prediction and co-optimization of chiplets, interconnects, and passives above 100 GHz.
Laser-assisted bonding provides localized energy for fine-pitch, low-thermal-stress assembly, enabling high-yield heterogeneous attachment of III-V devices onto silicon interposers.